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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor 2SA1006A description good linearity of h fe high collector-emitter breakdown voltage- : v (br)ceo = -200v(min) wide area of safe operation complement to type 2sc2336a applications adudio frequency power amplifier high frequency power amplifier absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage -200 v v ceo collector-emitter voltage -200 v v ebo emitter-base voltage -5.0 v i c collector current-continuous -1.5 a i cm collector current-peak -3.0 a collector power dissipation@ t a =25 1.5 p c total power dissipation@ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor 2SA1006A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce(sat) collector-emitter saturation voltage i c = -500ma; i b = -50ma -1.0 v v be(sat) base-emitter saturation voltage i c = -500ma; i b = -50ma -1.5 v i cbo collector cutoff current v cb = -150v; i e = 0 -1.0 a i ebo emitter cutoff current v eb = -3.0v; i c =0 -1.0 a h fe-1 dc current gain i c = -5ma ; v ce = -5v 30 h fe-2 dc current gain i c = -150ma ; v ce = -5v 60 320 f t current-gain?bandwidth product i c = -100ma ; v ce = -10v 80 mhz c ob output capacitance i e = 0 ; v cb = -10v;f= 1.0mhz 45 pf ? h fe-2 classifications r q p 60-120 100-200 160-320 |
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